Accession Number : ADP007972

Title :   Application of Migration-Enhanced Epitaxy to Novel Semiconductor Structures,

Corporate Author : NIPPON TELEGRAPH AND TELEPHONE CORP TOKYO

Personal Author(s) : Horikoshi, Y. ; Yamaguchi, H. ; Rao, T. S. ; Ramesh, S. ; Kobayashi, N.

Report Date : JUL 1992

Pagination or Media Count : 4

Abstract : Enhanced surface migration is essential to the growth of high quality epitaxial layers. In the growth of III-V compound semiconductors, surface migration is effectively enhanced by supplying group Ill atoms to the growing surface in the absence of group V atoms or molecules. In this situation, the lifetime of isolated group Ill atoms, which are quite mobile on the growing surface, is greatly increased resulting in these atoms migrating a large distance during growth. Migration-enhanced epitaxy (MEE) is based on this characteristic. MEE has proved useful for growing flat heterojunctions and for lowering the epitaxial growth temperature of III-V compound semiconductors. This paper describes the principle of MEE and its application to the growth of novel semiconductor structures such as GaAs/AlAs horizontal superlattices, ZnSe/GaAs superlattices, and (GaAs)l-x(Si2)x,/GaAs superlattices.

Descriptors :   *SEMICONDUCTOR DEVICES, *HETEROJUNCTIONS, ATOMS, EPITAXIAL GROWTH, HETEROJUNCTIONS, LAYERS, MIGRATION, MOBILE, MOLECULES, PAPER, QUALITY, SEMICONDUCTORS, STRUCTURES, SUPERLATTICES, SURFACES, TEMPERATURE, JAPAN, GALLIUM ARSENIDES, ZINC SELENIDES, ALUMINUM ARSENIDES.

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE