Accession Number : ADP007973
Title : Photoluminescence Characterization of Compound Semiconductor Optoelectronic Materials,
Corporate Author : ILLINOIS UNIV AT URBANA
Personal Author(s) : Stillman, G. E. ; Bose, S. S. ; Curtis, A. P.
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : For many optoelectronic applications of compound semiconductors, low defect concentration and either high-purity or low carrier concentration epitaxial layers are required. In order to be able to achieve these conditions reproducibly, it is important to have reliable high-purity sources appropriate for the desired epitaxial growth technique, and to be able to optimize the growth parameters for minimum non-radiative defects or deep levels. Because electrically active defects and impurities with concentrations in the part per billion (ppb) range can influence the performance of the devices of interest, the usual techniques are not useful. Mass spectrographic or x-ray techniques are not sensitive enough for identification of the residual impurities in high-purity epitaxial layers. The optical technique of photoluminescence (PL), can be used to identify the residual electrically active acceptor impurity species in these epitaxial layers as well as to detect optically active defects and to generally evaluate the quality of the material. In this paper we review the photoluminescence technique for characterization of GaAs and InP, and give examples of the information that can be obtained by this technique.
Descriptors : *PHOTOLUMINESCENCE, *SEMICONDUCTORS, EPITAXIAL GROWTH, IDENTIFICATION, IMPURITIES, LAYERS, MASS, MATERIALS, PARAMETERS, PURITY, QUALITY, RESIDUALS, ELECTROOPTICS, GALLIUM ARSENIDES, INDIUM PHOSPHIDES.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE