Accession Number : ADP007975

Title :   Photoluminescence from InGaAs/InGaAsP Quantum Wires Fabricated by Ga Focused Ion Beam,

Corporate Author : OSAKA UNIV (JAPAN) INST OF SCIENTIFIC AND INDUSTRIAL RESEARCH

Personal Author(s) : Yu, S. J. ; Asahi, H. ; Takizawa, J. ; Kim, S. ; Gonda, S.

Report Date : JUL 1992

Pagination or Media Count : 4

Abstract : Low dimensional structures such as quantum wires and boxes are one of the interesting subjects. Up to date, various microstructures have been fabricated and characterized by various methods. Focused ion beam (FEB) is one of the useful methods because this method makes it possible to modify, deposit and etch various materials in desired pattern. In this paper, we report fabrication of InGaAs/InGaAsP quantum wires by Ga FICB. The properties of quantum wires were investigated by photoluminescence (PL) method.

Descriptors :   *FABRICATION, *QUANTUM ELECTRONICS, *SEMICONDUCTOR DEVICES, BOXES, DEPOSITS, ION BEAMS, IONS, PATTERNS, PHOTOLUMINESCENCE, STRUCTURES, WIRE, FOCUSING, INDIUM PHOSPHIDES, GALLIUM ARSENIDES, JAPAN.

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Electricity and Magnetism
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE