Accession Number : ADP007975
Title : Photoluminescence from InGaAs/InGaAsP Quantum Wires Fabricated by Ga Focused Ion Beam,
Corporate Author : OSAKA UNIV (JAPAN) INST OF SCIENTIFIC AND INDUSTRIAL RESEARCH
Personal Author(s) : Yu, S. J. ; Asahi, H. ; Takizawa, J. ; Kim, S. ; Gonda, S.
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : Low dimensional structures such as quantum wires and boxes are one of the interesting subjects. Up to date, various microstructures have been fabricated and characterized by various methods. Focused ion beam (FEB) is one of the useful methods because this method makes it possible to modify, deposit and etch various materials in desired pattern. In this paper, we report fabrication of InGaAs/InGaAsP quantum wires by Ga FICB. The properties of quantum wires were investigated by photoluminescence (PL) method.
Descriptors : *FABRICATION, *QUANTUM ELECTRONICS, *SEMICONDUCTOR DEVICES, BOXES, DEPOSITS, ION BEAMS, IONS, PATTERNS, PHOTOLUMINESCENCE, STRUCTURES, WIRE, FOCUSING, INDIUM PHOSPHIDES, GALLIUM ARSENIDES, JAPAN.
Subject Categories : Mfg & Industrial Eng & Control of Product Sys
Electricity and Magnetism
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE