Accession Number : ADP007976

Title :   Infrared Characterization of Compound Semiconductors,

Corporate Author : FLORIDA UNIV GAINESVILLE DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s) : Deneuville, A.

Report Date : JUL 1992

Pagination or Media Count : 4

Abstract : As the band gaps of semiconductors are increasing, there are more and more problems to achieve large doping levels and good ohmic contacts to measure the carrier concentrations N and mobilities micron by Hall effect. On the other hand, as the devices structures contain more and more layers, in situ control at each processing step becomes more and more necessary. A solution of both problems might be contactless determination of N and u from infrared (IR) reflectivity. In the following, we give the physical and analytical bases of such determinations, and show examples of derivation of 'optical' N and micron on bulk GaAs and thin films of ZnSe.

Descriptors :   *SEMICONDUCTORS, *INFRARED OPTICAL MATERIALS, CONTROL, DOPING, FILMS, HALL EFFECT, LAYERS, PROCESSING, REFLECTIVITY, STRUCTURES, THIN FILMS, ENERGY GAPS, ENERGY BANDS.

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE