Accession Number : ADP007979
Title : Study of Epitaxial Growth by UHV-SEM and RHEED-TRAXS,
Corporate Author : TOKYO UNIV (JAPAN)
Personal Author(s) : Ino, Shozo
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : RHEED-TRAXS method has high sensitivity for the surface elementary analysis. Applying this method we studied the surface composition during adsorption and epitaxial growth processes of InSb/Si(100) and Ge/Sn/Ge(111) systems. We have developed a new UHV-SEM which has a high resolution of about 5 A. We found that by using the UHV-SEM we can observe directly the domain contrasts from the two dimensional surface structures such as 7x 7, 5x 2Au,3x 3-Ag which are formed on Au,Ag/Si(111) system.
Descriptors : *ELECTRON DIFFRACTION, *X RAY SPECTROSCOPY, *CRYSTAL STRUCTURE, ADSORPTION, EPITAXIAL GROWTH, HIGH RESOLUTION, HIGH SENSITIVITY, RESOLUTION, SENSITIVITY, STRUCTURES, SURFACES, TWO DIMENSIONAL, JAPAN, INDIUM ANTIMONIDES.
Subject Categories : Crystallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE