Accession Number : ADP007981
Title : Ga0.47In0.53As/InP Multiquantum Well Structures Observed by Scanning Tunneling Microscopy under Ultrahigh Vacuum,
Corporate Author : NIPPON TELEGRAPH AND TELEPHONE CORP IBARAKI OPTO-ELECTRONIC LABS
Personal Author(s) : Kato, Takashi ; Osaka, Fukunobu ; Tanaka, Ichiro ; Ohkouchi, Shunsuke
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : Multiquantum wells (MQW's) are being widely applied to various electronic and optoelectronic devices. It is of vital importance to characterize MQW structures such as period, uniformity of barrier and well layers and abruptness of hetero-interfaces as exactly as possible. A scanning tunneling microscope (STM) is considered as a useful tool to observe MQW structures with a high resolution. However, only a few data on this issue have been reported.
Descriptors : *QUANTUM ELECTRONICS, *SEMICONDUCTOR DEVICES, BARRIERS, ELECTRONICS, HIGH RESOLUTION, INTERFACES, LAYERS, MICROSCOPES, RESOLUTION, SCANNING, STRUCTURES, GALLIUM ARSENIDES, INDIUM PHOSPHIDES, SCANNING ELECTRON MICROSCOPES, TUNNELING(ELECTRONICS), JAPAN.
Subject Categories : Electrooptical and Optoelectronic Devices
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE