Accession Number : ADP007982
Title : Characterization of Strained Heterostructures by Cathodoluminescence,
Corporate Author : TECHNISCHE UNIV BERLIN (GERMANY F R)
Personal Author(s) : Bimberg, D. ; Grundmann, M. ; Christen, J.
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : Cathodoluminescence (CL) provides information about the local variation of the defect structure, the impurity incorporation and the electronic bandstructure of semiconductor layers which might be buried below the surface. It is particularly useful for the non-destructive characterization of device structures. In this paper we review some of recent results on strained layer structures. As model systems we investigate In0.23Ga0.77As/GaAs-, InP/Si- and locally deposited GaAs/Si-layers.
Descriptors : *CATHODOLUMINESCENCE, *PAPER, *CRYSTAL DEFECTS, ELECTRONICS, IMPURITIES, LAYERS, MODELS, SEMICONDUCTORS, STRUCTURES, VARIATIONS, GERMANY.
Subject Categories : Crystallography
Test Facilities, Equipment and Methods
Distribution Statement : APPROVED FOR PUBLIC RELEASE