Accession Number : ADP007986

Title :   Lateral Field Effect in Focused-Ion-Beam Written in-Plane-Gated Systems,

Corporate Author : MAX-PLANCK-INST FUER FESTKOERPERFORS- CHUNG STUTTGART (GERMANY F R)

Personal Author(s) : Wieck, A. D. ; Fischer, A. ; Ploog, K.

Report Date : JUL 1992

Pagination or Media Count : 4

Abstract : The present technology of microstructured devices is based on lithographic processes, which use masks and photoresist layers. The power of this techniques is the parallel production of many structures in a chip unit and many chip units on a wafer in a single run, once the complex masks have been fabricated. However, there are two essential inconveniences inherent to this technology: First, one needs not one, but several complex masks, which have to be precisely aligned with the permanent risk of contamination with particles. Second, all resist processes are indirect ones, i.e. the resist pattern serves as a further mask for subsequent etching or implantation steps, also sensitive to contamination on a rough as well as on a submicron scale. For this reason, it is highly desirable to fabricate semiconductor microstructures with a minimum number of process steps.

Descriptors :   *LITHOGRAPHY, *PHOTORESIST COATINGS, CONTAMINATION, ETCHING, IMPLANTATION, LAYERS, MASKS, PARTICLES, PATTERNS, POWER, PRODUCTION, RISK, SCALE, SEMICONDUCTORS, STRUCTURES, WAFERS, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, GERMANY.

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE