Accession Number : ADP007988

Title :   A Novel Vacuum Lithography with siNx Resist by Focused Ion Beam Exposure and Dry Etching Development,

Corporate Author : TOKYO UNIV (JAPAN)

Personal Author(s) : Takahashi, S. ; Ohashi, M. ; Fukatsu, S. ; Shiraki, Y. ; Ito, R.

Report Date : JUL 1992

Pagination or Media Count : 4

Abstract : There has been increasing interest in in-situ processing to avoid interface degradation which is an important problem in the III-V semiconductor technology. For in-situ processing involving regrowth of semiconductor layers, lithography techniques which can be integrated into vacuum processes are essential. In-situ pattern processing using focused ion beams (FIB) and electron beams (EB) has been demonstrated recently. In those works, however, very thin semiconductor oxide films which act as resists are not durable enough to allow the fabrication of fine and high-aspect-ratio patterns on substrate surfaces. moreover, maskless pattern formation by FIB-assisted etching has a serious problem of ion-induced damage.

Descriptors :   *LITHOGRAPHY, *SILICON NITRIDES, ASPECT RATIO, DAMAGE, DEGRADATION, ELECTRON BEAMS, ETCHING, FABRICATION, FILMS, INTERFACES, ION BEAMS, LAYERS, OXIDES, PATTERNS, PROCESSING, RATIOS, SEMICONDUCTORS, SUBSTRATES, SURFACES, VACUUM, JAPAN.

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE