Accession Number : ADP007989

Title :   ECR Plasma Etching of III-V Optoelectronic Devices,

Corporate Author : AT AND T BELL LABS MURRAY HILL NJ

Personal Author(s) : Pearton, S. J.

Report Date : JUL 1992

Pagination or Media Count : 4

Abstract : The dry etching of GaAs, InP and related compounds is gaining a resurgence of interest, largely due to the need to achieve high resolution, anisotropic etching in device applications. There are a variety of requirements of this etching, such as fast etch rate for creation of deep (greater than or equal to 1 um) trenches, high selectivity for one material over another (say GaAs over AlGaAs) or conversely equi-rate etching for these materials.

Descriptors :   *ETCHING, *SEMICONDUCTOR DEVICES, HIGH RESOLUTION, MATERIALS, RATES, REQUIREMENTS, RESOLUTION, ANISOTROPY.

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE