Accession Number : ADP007990

Title :   Influence of SiCl4 Reactive Ion Etching on the Electrical Characteristics of GaAs,

Corporate Author : GHENT RIJKSUNIVERSITEIT (BELGIUM)

Personal Author(s) : Lootens, D. ; Clauws, P. ; Van Daele, P. ; Demeester, P.

Report Date : JUL 1992

Pagination or Media Count : 4

Abstract : As the dimensions in optoelectronic components continue to shrink, more and more dry etching processes are used for patterning of the semiconductor material. Unfortunately the need for smaller dimensions requires anisotropic etching and so the use of energetic particles to stimulate the etching. Although RIE makes use of particles with relatively small energies (typically 2OOeV), the damage effects start playing a role, both in vertical direction and in lateral direction, as dimensions become smaller, like in quantum dots and wires. In literature, already a lot of work on REE-damage in GaAs has been reported, but only a few deal with the physical nature of the defects or with different doping types, although remarkable differences in the effect of particle bombardment on n-type and p-type have been reported and although the study of the different electrical behaviour of n- and p-type material, can reveal new information. The damage induced by the RIE-process can also be related to the chemistry of the reactive gases used. Our study covers electrical damage after SiCl4-RIE both in n- and p-type GaAs, involving capacitance-voltage (C-V) measurements on Schottky barriers and Deep Level Transient Spectroscopy (DLTS) measurements.

Descriptors :   *ETCHING, *ION BEAMS, *SEMICONDUCTOR DEVICES, *ELECTROOPTICS, BARRIERS, CAPACITANCE, CHEMISTRY, DAMAGE, DOPING, MATERIALS, MEASUREMENT, PARTICLES, REACTIVE GASES, SEMICONDUCTORS, SPECTROSCOPY, TRANSIENTS, VOLTAGE, WIRE, BELGIUM, SILICON CARBIDES, GALLIUM ARSENIDES, ION BOMBARDMENT, SCHOTTKY BARRIER DEVICES.

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics
      Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE