Accession Number : ADP007993

Title :   Sulfide Treatment on III-V Compound Surfaces,

Corporate Author : TSUKUBA UNIV IBARAKI (JAPAN) INST OF MATERIALS SCIENCE

Personal Author(s) : Nannichi, Yasuo

Report Date : JUL 1992

Pagination or Media Count : 2

Abstract : The treatment of GaAs with a sulfide solution was initiated by Sandroff and others in 1987. They used Na2S as the magic agent. After soaking the GaAs crystal. photoluminescence(PL) signal was drastically intensified and the current amplification factor in a bipolar transistor increased, meaning the suppression of carrier recombination velocity at the surface. However, it was soon known that the treatment effect was lost by rinsing the surface with water. They suggested the use of other sulfides, but we were the first to observe the more reliable effect of (NH4)2S as well as its variation, (NH4)2Sx.

Descriptors :   *SULFIDES, *GALLIUM ARSENIDES, *DOPING, *SURFACE PROPERTIES, *ELECTRICAL PROPERTIES, AMPLIFICATION, BIPOLAR TRANSISTORS, CRYSTALS, PHOTOLUMINESCENCE, SIGNALS, SUPPRESSION, SURFACES, TRANSISTORS, VARIATIONS, VELOCITY, JAPAN.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE