Accession Number : ADP007994
Title : Sulfur Passivation of GaAs Surfaces,
Corporate Author : FLORIDA UNIV GAINESVILLE DEPT OF MATERIALS SCIENCE AND ENGINEERING
Personal Author(s) : Wang, Yun ; Holloway, Paul H.
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : Passivation of GaAs (100) surfaces with chemical solutions containing P2s5 has been studied using photoluminescence, electrical tests(I-V, C-V), Auger electron and X-ray photoelectron spectroscopies, and scanning electron microscopy. The time stability of the interfacial passivation was a particular concern, and passivation protocols were developed to prolong the effects. The lifetime of passivation at contact interfaces were studied in particular. In addition, techniques to improve the uniformity of passivation and reduce surface morphology in the contact area have been developed.
Descriptors : *SULFUR, *SURFACE PROPERTIES, *DOPING, *GALLIUM ARSENIDES, *ELECTRICAL PROPERTIES, ADDITION, CHEMICALS, ELECTRON MICROSCOPY, INTERFACES, MORPHOLOGY, PHOTOELECTRONS, PHOTOLUMINESCENCE, SCANNING, STABILITY, SURFACES, TEST AND EVALUATION, X RAY SPECTROSCOPY, AUGER ELECTRON SPECTROSCOPY.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE