Accession Number : ADP007995
Title : Direct Observation of GaAs Surface Cleaning Process Under Hydrogen Radical Beam Irradiation,
Corporate Author : NEC CORP TSUKUBA (JAPAN) OPTO-ELECTRONICS RESEARCH LABS
Personal Author(s) : Iwata, Hiroshi ; Asakawa, Kiyoshi
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : Recently dry etching techniques have been adopted for surface cleaning of III-V compound semiconductors. The effectiveness of hydrogen (H) radical beam produced by electron cyclotron resonance (ECR) plasma for low-temperature surface cleaning has been successfully demonstrated. Removal of oxygen contamination on the GaAs substrate has been performed by H radical beam irradiation. This radical beam, which consists of only neutral radicals, is supposed to be free from surface damages caused by ion bombardment. Although the deoxidation of the native oxide layer resulting from the introduction of the H radical has been attributed as the factor leading to the removal of the oxygen contamination, there has yet to be any direct observation of such a chemical reaction.
Descriptors : *CLEANING, *ETCHING, *ION BOMBARDMENT, CHEMICAL REACTIONS, CHEMICALS, CONTAMINATION, CYCLOTRON RESONANCE, DAMAGE, HYDROGEN, IONS, IRRADIATION, LAYERS, LOW TEMPERATURE, OBSERVATION, OXIDES, REMOVAL, RESONANCE, SEMICONDUCTORS, SUBSTRATES, TEMPERATURE.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE