Accession Number : ADP007998

Title :   Indium Ohmic Contacts to n-ZnSe,

Corporate Author : FLORIDA UNIV GAINESVILLE DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s) : Wang, Y. X. ; Holloway, Paul H.

Report Date : JUL 1992

Pagination or Media Count : 8

Abstract : The reaction between an indium overlayer and high purity MBE grown n-ZnSe chlorine doped ( 2xlOl8 CM-3) epilayers has been investigated using X-ray diffraction, Rutherford backscattering spectroscopy, Xray photoelectron and Auger electron spectroscopy, and by electrical function tests (I-V and C-V) . Good ohmic contacts were formed after annealing at 250 deg C or 300 deg C for a few minutes in forming gas. Annealing at lower or higher temperatures resulted in higher resistance or rectifying contacts. The data show that no compounds were formed at the interface; instead In appeared to diffuse into the ZnSe. High surface doping densities appear to allow an ohmic contact, but the electrical data suggest that compensation effects are also very significant in formation of the contact. These effects must be considered for successful formation of the ohmic contact.

Descriptors :   *ELECTRIC CONTACTS, ANNEALING, AUGER ELECTRON SPECTROSCOPY, BACKSCATTERING, CHLORINE, DIFFRACTION, ELECTRON SPECTROSCOPY, FUNCTIONS, INDIUM, PHOTOELECTRONS, PURITY, RESISTANCE, TEMPERATURE, TEST AND EVALUATION, X RAY DIFFRACTION, MOLECULAR BEAMS, EPITAXIAL GROWTH, ZINC SELENIDES, DOPING.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE