Accession Number : ADP008000
Title : Full-Wafer Technology for Laser Fabrication and Testing,
Corporate Author : IBM RESEARCH DIV SAN JOSE CA
Personal Author(s) : Webb, D. J. ; Benedict, M. K. ; Bona, G. L. ; Buchmann, P. ; Cohoon, N.
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : Full-wafer fabrication of AlGaAs lasers, which have mirrors etched by chemically assisted ion-beam etching and passivated by ion-beam sputtered AI2O3, is described. Full-wafer testing techniques for both laser parameters (P-1, far-field, spectrum, TO), as well as other test sites for process development and control (critical dimensions, overlay, etch depths, sheet resistances) have been developed. The lasers have excellent beam quality, with an rms phase-front distortion (BAIA) of less than 0.04. Operation in a single transverse mode at output powers up to about 50 mW and catastrophic optical damage thresholds of about 120 mW have been demonstrated. Full-wafer testing of 1400 lasers with a yield of functioning lasers of over 90%, and with good uniformity of P-I characteristics over a wafer will be shown. These fabrication and testing techniques are being developed with the aim both of improving the fabrication of discrete lasers, and of laying the basis for future developments towards optoelectronic integration.
Descriptors : *FABRICATION, *GALLIUM ARSENIDE LASERS, CONTROL, DAMAGE, DEPTH, DISTORTION, ETCHING, FAR FIELD, INTEGRATION, ION BEAMS, MIRRORS, OUTPUT, OVERLAYS, PARAMETERS, PHASE, QUALITY, RESISTANCE, SHEETS, SITES, TEST AND EVALUATION, TRANSVERSE, WAFERS, SPUTTERING, MONOLITHIC STRUCTURES(ELECTRONICS), SWITZERLAND.
Subject Categories : Lasers and Masers
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE