Accession Number : ADP008002

Title :   Epitaxial Liftoff Technology for OEIC's,

Corporate Author : BELL COMMUNICATIONS RESEARCH INC RED BANK NJ

Personal Author(s) : Yablonovitch, E. ; Chan, W. K. ; Yi-Yan, A.

Report Date : JUL 1992

Pagination or Media Count : 3

Abstract : Epitaxial liftoff permits the integration of III-V films and devices onto arbitrary material substrates. This paper will review Bellcore's work on optoelectronic integration of III-V optical transmitter and receiver devices onto LiNbO3, glass, Silicon and sapphire substrates. In the field of electronic materials there has been a persistent interest in the integration of high quality epitaxial thin film semiconductor layers with arbitrary crystalline or glass substrates. For example, thin film GaAs layers on crystalline Silicon substrates would allow the combination of the two technologies. This has led to a massive effort on lattice mis-matched heteroepitaxial growth. Recently, however, a new and more flexible approach has been attracting increasing attention.

Descriptors :   *OPTICAL CIRCUITS, ELECTRONICS, FILMS, GLASS, INTEGRATION, LAYERS, MATERIALS, QUALITY, RECEIVERS, SAPPHIRE, SEMICONDUCTORS, SILICON, SUBSTRATES, THIN FILMS, TRANSMITTERS, LITHIUM NIOBATES, GALLIUM ARSENIDES, EPITAXIAL GROWTH.

Subject Categories : Electrooptical and Optoelectronic Devices
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE