Accession Number : ADP008003
Title : Submilliampere-Threshold Multi-Quantum-Well AlGaAs Lasers and Their Integration of More Than 100 Lasers,
Corporate Author : SONY CORP RESEARCH CENTER YOKOHAMA (JAPAN)
Personal Author(s) : Hirata, Shoji ; Narui, Hironobu ; Mori, Yoshifumi
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : Extremely low threshold lasers are very much in demand for opt-electronic integrated circuits (OEICs), such lasers can realize dreams of optical parallel processing systems and optical computing, because very dense integration of optical devices requires low heat generation and low electric power consumption. Recently, submilliampere lasers have been reported from several laboratories, but these lasers require high-reflection facet coating, which prevents high light output power. The lowest threshold current achieved with an uncoated device had been 1.8mA under pulsed operation and 2.5mA under continuous wave (CW) operation. We have developed a new type buried heterostructure (BH) laser using single-step MOCVD on a nonplanar GaAs substrate. Our laser has the lowest threshold current value of 0.88mA and the highest energy conversion efficiency of 42% at lmW/facet at room temperature (RT) under CW conditions without facet coating. Then we have fabricated 102 laser arrays and realized their uniform operations.
Descriptors : *GALLIUM ARSENIDE LASERS, *OPTICAL CIRCUITS, ARRAYS, COATINGS, CONSUMPTION, CONTINUOUS WAVES, CONVERSION, EFFICIENCY, ELECTRIC POWER, ELECTRONICS, ENERGY CONVERSION, INTEGRATED CIRCUITS, INTEGRATION, LIGHT, NONPLANAR, OPERATION, OUTPUT, PARALLEL PROCESSING, POWER, REFLECTION, ROOM TEMPERATURE, SUBSTRATES, POWER LEVELS, JAPAN.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE