Accession Number : ADP008005

Title :   Fabrication of GaAlAs/GaAs Single Quantum Well Gain-Coupled Distributed Feedback Lasers,

Corporate Author : TOKYO UNIV (JAPAN)

Personal Author(s) : Luo, Y. ; Cao, H. L. ; Dobashi, M. ; Hosomatsu, H. ; Nakano, Y.

Report Date : JUL 1992

Pagination or Media Count : 4

Abstract : The gain-coupled distributed feedback (DFB) semiconductor laser is regarded as a promising light source for applications such as optical communication and optical measurement, because of its unique features such as complete single longitudinal mode property, immunity to facet reflection, and resistance to external optical feedback. The introduction of the quantum well structure to the gain-coupled DFB laser is thought to bring further advantages. We are trying to fabricate gain-coupled DFB lasers with a single quantum well (SQW) active layer. In this paper, we report the preliminary experiment on the fabrication procedure and the characteristics of the SQW gain-coupled DFB laser.

Descriptors :   *FABRICATION, *GALLIUM ARSENIDE LASERS, EXTERNAL, FEEDBACK, GAIN, IMMUNITY, LAYERS, LIGHT SOURCES, MEASUREMENT, OPTICAL COMMUNICATIONS, REFLECTION, RESISTANCE, SEMICONDUCTOR LASERS, STRUCTURES, JAPAN.

Subject Categories : Lasers and Masers
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE