Accession Number : ADP008006
Title : Effect of Window Diffusion Stripe Structure on Reduction of Temperature Rise at Laser Facet,
Corporate Author : MITSUBISHI ELECTRIC CORP KANAGAWA (JAPAN)
Personal Author(s) : Shima, Akihiro ; Kokubo, Yoshihiro ; Aiga, Masao
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : Recently, optical data processing systems have increasingly required higher-power and more reliable short wavelength laser diodes. However, the major problem in high-power and long-term operation of the AlGaAs lasers is the degradation of the active layer In the vicinity of the mirror facet. This degradation is considered to be caused by heat generation due to the optical absorption resulting from the surface recombination at the mirror surface. The facet temperature rise of loss-guided stripe lasers such as a channeled substrate planar (CSP) laser was investigated, using laser Raman spectroscopy. It was confirmed that the optical absorption in the GaAs substrate outside the channel (stripe) region also increased the facet temperature, and the facet degradation began from the outside of the channel. On the other hand, a window diffusion stripe (WDS) laser has a non-absorbing region near the mirror and hardly absorbs the optical flux in the outside of the stripe region.
Descriptors : *GALLIUM ARSENIDE LASERS, *INFRARED WINDOWS, ABSORPTION, CHANNELS, DATA PROCESSING, DEGRADATION, DIFFUSION, DIODES, HANDS, HIGH POWER, LAYERS, MIRRORS, OPERATION, OPTICAL DATA, POWER, PROCESSING, RAMAN SPECTROSCOPY, SHORT WAVELENGTHS, STRIPES, SUBSTRATES, SURFACES, TEMPERATURE, JAPAN.
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE