Accession Number : ADP008008
Title : Fabrication of GaInAs(P)/InP Quantum-Wire Structures for Lasers and Electro-Optical Devices,
Corporate Author : TOKYO INST OF TECH (JAPAN)
Personal Author(s) : Arai, Shigehisa ; Suematsu, Yasuharu
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : Realization of high performance optical devices based on lower dimensional electron systems in quantum-well structures essentially requires two key technologies, an ultra-fine lithography including an etching process and a growth of quality crystals on a patterned substrate, even though there are several methods reported to obtain those devices. We reported a lasing action of GaInAs/InP quantum-wire (10nm thick, 30nm wide) lasers at 77K fabricated by employing an EBX direct writing, a wet chemical etching, and an OMVPE regrowth. However the threshold current was too high to operate at room temperature due to poor regrown interface.
Descriptors : *HETEROJUNCTIONS, *FABRICATION, CRYSTALS, ELECTRONS, ETCHING, INTERFACES, LITHOGRAPHY, QUALITY, ROOM TEMPERATURE, STRUCTURES, SUBSTRATES, TEMPERATURE, WIRE, JAPAN, GALLIUM ARSENIDES, INDIUM PHOSPHIDES, SEMICONDUCTOR LASERS.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE