Accession Number : ADP008009

Title :   Polarization Controlled Semiconductor Photonic Devices by Strained-Barrier Superlattice Structures,

Corporate Author : NIPPON TELEGRAPH AND TELEPHONE CORP IBARAKI OPTO-ELECTRONIC LABS

Personal Author(s) : Okamoto, M. ; Magari, K. ; Itaya, Y.

Report Date : JUL 1992

Pagination or Media Count : 4

Abstract : Strained layer superlattice (SLS) structures offer excellent versatility for tailoring different energy-band structures 1),2). For example, the difference between TE and TM modes can be readily controlled by selecting layer lattice parameters to produce tensile strain in the structures). This approach can be exploit to fabricate polarization-insensitive amplifier with high gain.

Descriptors :   *SUPERLATTICES, *PHOTONICS, AMPLIFIERS, ENERGY BANDS, HIGH GAIN, LAYERS, PARAMETERS, POLARIZATION, STRUCTURES, JAPAN.

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE