Accession Number : ADP008013
Title : Semiconductor Waveguide Switches and Modulators,
Corporate Author : TOKYO UNIV (JAPAN)
Personal Author(s) : Tada, Kunio
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : Many people think that the electrooptic properties of GaAs and InP are inferior to those in LiNbO3. This is not the case. It is true that the linear electrooptic coefficient r is much smaller in these semiconductors than in LiNbO3. However, the refractive index n is much larger, and the relative permittivity epsilon sub r, is much smaller. As a result, the most important figure of merit PI A/delta f (modulating power/bandwidth), which is proportional to er/n6r2 in waveguide modulators, in GaAs or InP is comparable to that in LiNbO3, in the wavelength region 1-1.6um. Besides the linear electrooptic (Pockels) effect, a variety of physical phenomena in these materials resulting in changes of the refractive index and the absorption coefficient can be utilized to build fast and compact modulators/switches.
Descriptors : *WAVEGUIDE SWITCHES, *LIGHT MODULATORS, *LITHIUM NIOBATES, ABSORPTION COEFFICIENTS, BANDWIDTH, BIREFRINGENCE, ELECTROOPTICS, FIGURE OF MERIT, POWER, REFRACTIVE INDEX, SEMICONDUCTORS, OPTICAL PROPERTIES, JAPAN.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE