Accession Number : ADP008014

Title :   Properties of Waveguides, Routing Structures and Switches Fabricated by Impurity Induced Layer Disordering,

Corporate Author : ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : DeTemple, T. A.

Report Date : JUL 1992

Pagination or Media Count : 3

Abstract : Since its discovery in 1981, the phenomena of impurity induced layer disordering (IILD), or intermixing, has received some attention because of its promise as a planar optically self aligned fabrication method for buried channel optical waveguide structures such as PIC or OEIC. The process is such that the intermixed region has a higher bandgap and hence lower index of refraction than the original structure permitting lateral index of refraction control via masks. originally seen in AlGaAs, the effect is now known to exist in three other laser related alloys, all of which contain graded Al-Ga layers and which preserve lattice matching after intermixing.

Descriptors :   *OPTICAL WAVEGUIDES, *WAVEGUIDE SWITCHES, CHANNELS, CONTROL, FABRICATION, IMPURITIES, LAYERS, MASKS, MATCHING, REFRACTION, REGIONS, ALUMINUM GALLIUM ARSENIDES, LASER MATERIALS.

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE