Accession Number : ADP008015
Title : Room Temperature Stark-Ladder Transitions and Electro-Optic Bistability in GaAs/AlAs Superlattices with Different Miniband Widths,
Corporate Author : ATR OPTICAL AND RADIO COMMUNICATIONS RESEARCH LABS KYOTO (JAPAN)
Personal Author(s) : Kawashima, K. ; Fujiwara, K. ; Yamamoto, T. ; Sigeta, M. ; Kobayashi, K.
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : Recently, there has been an increasing interest in Wannier-Stark localization in superlattices for various advantages to photonic device applications such as optical modulators or bistable switching devices. To achieve a high on/off ratio bistable operation, which is based on a self-electro-optic-effect device (SEED), device improvement using a Fabry-Perot resonator and/or a reflective structure has been reported. However, for application to vertical transmission devices, it is important to enhance the oscillator strength of optical absorption in superlattice layers, which is associated with both electric field-induced blue shift of the absorption edge and additional absorption peak shifts by Stark-ladder transitions. In this paper, we report on a systematic study of room temperature Stark-ladder transitions in GaAs/AlAs superlattices with different miniband widths. We observed the highest quantum coherence of 11 periods in the wide-miniband superlattice. Furthermore, we show the dependence of electro-optic bistable properties on the oscillator strength of the Stark-ladder transitions.
Descriptors : *PHOTONICS, *SUPERLATTICES, *PHOTONICS, *BISTABLE DEVICES, ABSORPTION, COHERENCE, EDGES, ELECTRIC FIELDS, LAYERS, OPTICS, OSCILLATORS, RATIOS, RESONATORS, ROOM TEMPERATURE, STRUCTURES, TRANSITIONS, JAPAN, LIGHT MODULATORS, OPTICAL SWITCHING.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE