Accession Number : ADP008017
Title : Room Temperature Excitonic Transitions and Electro-Optical Bistability in Strained InxGa(1-x)As/Al0.15Ga0.85As Multiple Quantum Wells,
Corporate Author : ATR OPTICAL AND RADIO COMMUNICATIONS RESEARCH LABS KYOTO (JAPAN)
Personal Author(s) : Kawashima, K. ; Fujiwara, K. ; Kobayashi, K.
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : Recently, there have been a great deal of attention in strained In.Gal-xAs heterostructures grown on the GaAs substrate. This is because the strained systems can provide additional freedom for the material design and various advantages to optoelectronic device applications. For applications to vertical-beam optical devices which are very useful for parallel optical beam processing, however, the advantage offered by the InxGal-xAs material system is crucial. This is because the exciton resonance absorption can occur at energy below the bandgap of the GaAs substrate. This means that there is no need to remove the substrate to transmit the radiation at wavelength of interest. This is in fact the great advantage of the InxGal-xAs material system especially for an integrated-type device. Although recent advancement of the crystal growth techniques enables us to prepare high quality strained epitaxial layers, basic understanding of the band lineup problem is still controversial. Investigations of the pseudomorphic strained heterostructures are therefore important in tailoring the device characteristics.
Descriptors : *EXCITONS, ABSORPTION, ATTENTION, CRYSTAL GROWTH, ENERGY, LAYERS, MATERIALS, QUALITY, RADIATION, RESONANCE ABSORPTION, SUBSTRATES, INDIUM COMPOUNDS, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, JAPAN, BISTABLE DEVICES.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE