Accession Number : ADP008018
Title : Ultrafast Measurements of Tunneling Dynamics in a GaAs/AlGaAs MQW Pin Optical Modulator,
Corporate Author : UNIVERSITY OF CENTRAL FLORIDA ORLANDO CENTER FOR RESEARCH IN ELECTRO-OPTICS A ND LASERS
Personal Author(s) : Park, C. B. ; Miller, A. ; Hutchings, D. C. ; LiKamWa, P.
Report Date : JUL 1992
Pagination or Media Count : 4
Abstract : It has attracted much attention to investigate the mechanisms responsible for the vertical transport of photogenerated carriers in semiconductor multiple quantum wells since all Photoconductive devices depend on it for their properties. The photoconductive rise time which is directly related to the carrier sweep-out time gives important characteristics such as switching time and risetime to SEED (Self Electro-optic Effect Device) - type logic devices and photodetectors. The ultrafast response depends on the detailed nature of the cross well carrier transport mechanisms. Previous measurements have employed the excite-probe technique with electrically biased MQWs to monitor thermionic emission and tunneling via transmission changes caused by the relaxation of the quantum confined Stark effect as carriers leaving the wells.
Descriptors : *LIGHT MODULATORS, *ELECTROOPTICS, EMISSION, LOGIC DEVICES, MEASUREMENT, MONITORS, OPTICS, PHOTODETECTORS, PROBES, RELAXATION, RESPONSE, SEEDS, SEMICONDUCTORS, STARK EFFECT, THERMIONIC EMISSION, TRANSPORT, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, TUNNELING(ELECTRONICS), PIN DIODES, OPTICAL SWITCHING.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE