Accession Number : ADP008020
Title : Effects of Sputtering Pressure on Roughness and Resputtering of Multilayers,
Corporate Author : CAMBRIDGE UNIV (UNITED KINGDOM) DEPT OF METALLURGY AND MATERIALS SCIENCE
Personal Author(s) : Hasan, M.M. ; Highmore, R.J. ; Somekh, R.E.
Report Date : 05 MAR 1992
Pagination or Media Count : 4
Abstract : This summary outlines studies of W-Si and Co-Cu multilayers. We recognize that W-Si is unlikely to make optimal x-ray mirrors, because Si is more strongly absorbing than, say, carbon for most radiation wavelengths, and because the known propensity of metal-silicon couples to interdiffuse to form silicides suggests that interfaces are unlikely to be very sharp. W-Si is, though, a useful model system. A more extensive account of our work with W-Si and related systems is contained in 1. Interfacial roughness is important in determining the properties not only of x-ray mirror, but also of multilayer systems which exhibit so-called 'giant magnetoresistance'. We are using Co-Cu as a model system with which to study this phenomenon. Multilayers were deposited onto pieces of Si wafer and strips of Cu in two-target UHV dc magnetron sputtering systems. The systems are similar, but not identical, to the one described in 2; substrates sit on a rotating substrate holder and pass alternately beneath the two magnetrons. The sputtering gas was Ar and the target-substrate distances were 30 mm for W, Si and Co and 42 mm for Cu.
Descriptors : *X RAYS, INTERFACES, MAGNETRONS, MIRRORS, RADIATION, ROUGHNESS, SILICIDES, SILICON, SPUTTERING, SUBSTRATES, WAFERS, SOFT X RAYS, LAYERS.
Subject Categories : Nuclear Physics & Elementary Particle Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE