Accession Number : ADP008033
Title : Application of In-Situ Ellipsometry to the Study of Ultrathin Layers and Soft X-Ray Multilayers,
Corporate Author : TOHOKU UNIV SENDAI (JAPAN)
Personal Author(s) : Yamamoto, Masaki
Report Date : 05 MAR 1992
Pagination or Media Count : 4
Abstract : Ellipsometry is an accurate tool to study surface and thin film phenomena. It gives information of the dielectric boundary structures causing diffractions or reflections at the probed area of a surface down to the escape depth of the probe light. With a He-Ne laser light of a wavelength of 633nm, the probed depth for most metals are of an order of a few tens nm, being equivalent to several periods of a soft x-ray multilayer. The accuracy achieved for the single layers is at least a few tenths of ran in thickness. When the fabrication processes are investigated at the high accuracy of ellipsometry, real ultrathin films exhibit characteristic ellipsometric response originating from various imperfections such as non-uniformity (island structure or pinholes), oxidation, chemical compound formation, and diffusion at the interfacial boundary. These are all important phenomena to be studied and controlled for realization of better soft x-ray multilayer optics.
Descriptors : *SOFT X RAYS, *ELLIPSOMETERS, *THIN FILMS, BOUNDARIES, CHEMICAL COMPOUNDS, DEPTH, DIELECTRICS, DIFFRACTION, DIFFUSION, FABRICATION, LASERS, LAYERS, METALS, OPTICS, OXIDATION, PROBES, REFLECTION, STRUCTURES, SURFACES, X RAYS, X RAY APPARATUS, JAPAN.
Subject Categories : Optics
Nuclear Physics & Elementary Particle Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE