Accession Number : ADP008057

Title :   Thermal Stability of Mo-Based Multilayers Fabricated by rf Sputtering,

Corporate Author : NIPPON TELEGRAPH AND TELEPHONE CORP ATSUGI LSI LABS

Personal Author(s) : Ishii, Yoshikazu ; Takenaka, Hisataka ; Kawamura, Tomoaki ; Kinoshita, Hiroo

Report Date : 05 MAR 1992

Pagination or Media Count : 3

Abstract : Mo-based periodic multilayers such as Mo/Si and Mo/B4C show great promise as reflectors for soft x-ray reduction lithography 1-3). The thermal stability of multilayers is one of the most important factors for ensuring the reliable performance. The Mo/Si and Mo/B4C multilayers show high reflectivity in the 8 nm - 15 nm region at normal incidence. The purpose of this paper is to present the resulting changes of layered and 'crystal structures of the Mo/Si and Mo/B4C multilayers upon thermal annealing.

Descriptors :   *SOFT X RAYS, *THERMAL STABILITY, *MOLYBDENUM, *SPUTTERING, *RADIOFREQUENCY, ANNEALING, LITHOGRAPHY, REDUCTION, REFLECTIVITY, REFLECTORS, REGIONS, SILICON, STABILITY, STRUCTURES, X RAYS, CARBON, BORON, LAYERS, CRYSTAL STRUCTURE, DEPOSITION, SUBSTRATES.

Subject Categories : Fabrication Metallurgy
      Crystallography
      Radiofrequency Wave Propagation

Distribution Statement : APPROVED FOR PUBLIC RELEASE