Accession Number : ADP008084

Title :   Resonant-Tunneling Diodes: Quantum Physics at the Common-or-Garden Level,

Corporate Author : TECHNISCHE HOGESCHOOL EINDHOVEN (NETHERLANDS)

Personal Author(s) : Noteborn, H. J.

Report Date : APR 1992

Pagination or Media Count : 2

Abstract : New semiconductor growth techniques have enabled the construction of mesoscopic devices, the operation of which is directly based on quantum phenomena. Both the static and dynamic behaviour of these novel devices, of which the resonant-tunneling diode is an interesting example, have promising applicabilities. In this contribution, we will shortly overview our recent modeling of resonant tunneling and present our latest results. Our model of resonant tunneling is based on coherent quantum-mechanical tunneling through the double-barrier structure, calculated within a single-particle envelope wave-function approach. In addition, the electrostatic feedback of the charge build-up in the well is taken into account, yielding self-consistent current and charge densities. This feedback mechanism leads to a bistability in the I-V characteristic: in a small bias interval on the high-voltage side of the current peak, we find two stable self-consistent current branches, one with and one without substantial storage of charge in the well.

Descriptors :   *QUANTUM ELECTRONICS, *CRYSTAL GROWTH, BARRIERS, BIAS, DENSITY, DYNAMICS, ELECTROSTATICS, FEEDBACK, FUNCTIONS, HIGH VOLTAGE, MODELS, OPERATION, PARTICLES, SEMICONDUCTORS, STATICS, VOLTAGE, WAVE FUNCTIONS, NETHERLANDS, TUNNELING(ELECTRONICS), SEMICONDUCTOR DIODES, CRYSTAL STRUCTURE.

Subject Categories : Electrooptical and Optoelectronic Devices
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE