Accession Number : ADP008093
Title : Single Layer Structure Supporting both HBT and Modulator,
Corporate Author : AT AND T BELL LABS HOLMDEL NJ
Personal Author(s) : Goossen, K. W. ; Cunningham, J. E. ; Jan, W. Y.
Report Date : APR 1992
Pagination or Media Count : 2
Abstract : Optical interconnection of electronic integrated circuit chips is currently of great interest. This would provide a much greater bandwidth of information flow on and off the chip, especially if surface-normal devices are used since then information may flow vertically from the chip and the entire area of the chip may be used rather than just the periphery. Modulators are attractive candidates for active optical input/output. We demonstrate here a simple, elegant scheme for producing a modulator and a heterojunction bipolar transistor (HBT) on the same chip. Our layer structure is generally n-p-i-n from the surface downward, with the top layer forming the emitter, and the i region between base and collector. Separate HBT's and modulators are formed by etching mesas with or without emitter pads and without or with optical windows, respectively. This structure has been investigated previously, in Ref. 1, wherein the i region was a GaAs/Al0.3 Ga 0.7 as a multiple quantum well (MQW). This MQW is pathological to the performance of a HBT, since the high barriers block carriers from leaving the base.
Descriptors : *BIPOLAR TRANSISTORS, *INTEGRATED CIRCUITS, *OPTICAL CIRCUITS, ACCUMULATORS, BANDWIDTH, BARRIERS, BOUNDARIES, ELECTRONICS, EMITTERS, ETCHING, GALLIUM ARSENIDES, HETEROJUNCTIONS, INPUT, LAYERS, OUTPUT, REGIONS, SURFACES, WINDOWS, INFORMATION TRANSFER, HIGH RATE, LIGHT MODULATORS.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE