Accession Number : ADP008101
Title : Etched Vertical-Cavity Surface Emitting Laser Diodes,
Corporate Author : AT AND T BELL LABS MURRAY HILL NJ
Personal Author(s) : Choquette, Kent D. ; Hasnian, G. ; Mannaerts, J. P. ; Wynn, J. D. ; Wetzel, R. C.
Report Date : APR 1992
Pagination or Media Count : 2
Abstract : Vertical-cavity surface emitting lasers (VCSEL's) are promising light sources for optical computing and interconnection due to their unique topology and two-dimensional array capacity. To date, VCSEL's with monolithic distributed Bragg reflectors (DBR's) require current injection through the upper p-type DBR resulting in a large threshold voltage due to the concomitant series resistance. The voltage drop in the p-type DBR also leads to additional thermal effects which degrade the VCSEL performance. Various methods, such as introducing extra layers with intermediate composition into the quarterwave DBR or tapered doping in the p-type DBR have provided a reduction in the series resistance, but have lead to complicated DBR designs. We have developed a novel VCSEL structure, utilizing dry etching, in situ metallization, and ion implantation, which can avoid current injection through the upper DBR, and thus simplifies the required epilayers. We report a comparison between our etched/implanted devices and VCSEL's formed by a planar ion implantation process, all fabricated from the same wafer.
Descriptors : *SEMICONDUCTOR LASERS, ARRAYS, CAVITIES, COMPARISON, DOPING, ETCHING, INJECTION, ION IMPLANTATION, LIGHT SOURCES, REDUCTION, REFLECTORS, RESISTANCE, STRUCTURES, SURFACES, TOPOLOGY, TWO DIMENSIONAL, VOLTAGE, WAFERS.
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE