Accession Number : ADP008102

Title :   Monolithic Integration of a Resonant Fabry-Perot Cavity p-i-n Photodiode with HBT's for 1.52 micrometers Optoelectronic Receivers,

Corporate Author : BELL COMMUNICATIONS RESEARCH INC RED BANK NJ

Personal Author(s) : Dodabalapur, Ananth ; Chang, T. Y. ; Chandrasekhar, S.

Report Date : APR 1992

Pagination or Media Count : 2

Abstract : The use of appropriately designed Fabry-Perot cavities has recently been shown to enhance the quantum efficiency of thin photodetectors. We describe our results toward utilizing such resonant detectors in integrated optoelectronic receivers for 1.5-1.6 micrometers. The schematic layer structure of the as-grown material is shown. It essentially consists of a npn heterojunction bipolar transistor (HBT) with a multilayer InAlAs/InGaAlAs (Eg approx.1.06 eV) subcollector. The thicknesses of the layers are carefully chosen such that the subcollector forms a quarter-wave stack (QWS) with a stop band at 1.52-1.55 micrometer. The total thickness of the other layers in the HBT (collector, base and emitter) are designed such that a Fabry-Perot cavity with a mode located at the peak of the stop band of the QWS is formed when a metallic reflector is deposited on the sample surface. This occurs when the total optical thickness of the layers, including a contribution due to the phase shift at the metallic mirror, is an odd multiple of Lambda/4. The total optical thickness of these layers is 7 Lambda/4. A resonant cavity p-i-n photodiode is formed by contacting the p+(base) and n+ subcollector. The n-type layers which constitute the emitter in the HBT are electrically inactive in the resonant photodiode.

Descriptors :   *PHOTODETECTORS, *PHOTODIODES, *ELECTROOPTICS, ACCUMULATORS, BIPOLAR TRANSISTORS, CAVITY RESONATORS, DETECTORS, EFFICIENCY, EMITTERS, HETEROJUNCTIONS, LAYERS, MATERIALS, MIRRORS, PHASE SHIFT, QUANTUM EFFICIENCY, REFLECTORS, STRUCTURES, SURFACES, THICKNESS, MONOLITHIC STRUCTURES(ELECTRONICS), FABRY PEROT INTERFEROMETERS.

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE