Accession Number : ADP008122
Title : Butt-Coupled PIN Photodiode on InP Using Selective Refill MOVPE Growth,
Corporate Author : HEINRICH-HERTZ-INST FUER NACHRICHTENTECHNIK BERLIN G M B H (GERMANY F R)
Personal Author(s) : Umbach, A. ; Kayser, O. ; Trommer, D. ; Unterborsch, G.
Report Date : APR 1992
Pagination or Media Count : 2
Abstract : The integration of photodetectors with optical waveguides is a key element in the fabrication of optoelectronic integrated circuits (OEICs) for long wavelength communication techniques. For example, coherent heterodyne receivers or wavelength demultiplexer chips combine the optical information processing by waveguide devices with the highly sensitive photodetection by waveguide integrated pinFETs /1,2/. For the light coupling from the waveguide into the photodiode two different concepts are feasible, i.e. evanescent and butt-joint coupling. The latter scheme provides several advantages as compared to the vertical integration. Firstly, the lateral detector dimensions may be smaller due to the higher absorption efficiency thus providing a reduced device capacitance and an increased cut-off frequency. Furthermore, light coupling does not depend on the waveguide structure enabling the separate optimization of the passive components. Finally, recessing the photodiodes leads to planar devices which facilitates the integration e.g. with field effect transistors.
Descriptors : *COUPLINGS, *PIN DIODES, *INTEGRATED CIRCUITS, *INDIUM PHOSPHIDES, *PHOTODIODES, *EPITAXIAL GROWTH, ABSORPTION, CAPACITANCE, CIRCUITS, DETECTORS, EFFICIENCY, FABRICATION, FIELD EFFECT TRANSISTORS, FREQUENCY, HETERODYNING, INFORMATION PROCESSING, INTEGRATION, LIGHT, LONG WAVELENGTHS, OPTICAL WAVEGUIDES, OPTIMIZATION, COHERENCE, OPTICS, PHOTODETECTION, PHOTODETECTORS, PROCESSING, PASSIVITY, RECEIVERS, STRUCTURES, TRANSISTORS, WAVEGUIDES, DEPOSITION.
Subject Categories : Electrical and Electronic Equipment
Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE