Accession Number : ADP008124

Title :   Small Signal and CW Operation of the Lateral Current Injection Heterostructure Field Effect Laser,

Corporate Author : AT AND T BELL LABS HOLMDEL NJ

Personal Author(s) : Evaldsson, P. A. ; Taylor, G. W. ; Cooke, P. W. ; Claisse, P. R. ; Kiely, P. A.

Report Date : APR 1992

Pagination or Media Count : 2

Abstract : Recently, we reported on a new Lateral Current Injection Laser suitable for optoelectronic integration, the Heterostructure Field Effect Laser (HFEL). This device utilizes the field effect at the heterointerface within the same structure used to make the Heterostructure Field Effect Transistor (HFET), and the Bipolar Inversion Channel Field Effect Transistor (BICFET). The laser and the HFET can be fabricated from the same single epitaxial growth sequence using the same fabrication sequence. The properties of each device can be optimized simultaneously.

Descriptors :   *LASERS, *FIELD EFFECT TRANSISTORS, INJECTION LASERS, CURRENTS, SIGNALS, CONTINUOUS WAVES, INTERFACES, EPITAXIAL GROWTH, FABRICATION, GALLIUM ARSENIDES, SUBSTRATES, MOLECULAR BEAMS, ALUMINUM, WAVEGUIDES, OPTICS, ELECTRONS, EMITTERS, ALUMINUM GALLIUM ARSENIDES, CURRENT DENSITY, LAYERS, DOPING, CLADDING.

Subject Categories : Lasers and Masers
      Electrical and Electronic Equipment
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE