Accession Number : ADP008159

Title :   Dielectric Cap Disordering of InGaAs Quantum Well Structures on InP and GaAs,

Corporate Author : GLASGOW UNIV (UNITED KINGDOM)

Personal Author(s) : Bradshaw, S. A. ; Bryce, A. C. ; Tozowonah, E. ; Marsh, J. H. ; Bradley, R.

Report Date : APR 1992

Pagination or Media Count : 2

Abstract : Many InGaAs Quantum Well (QW) structures have limited thermal stability and this limits the use of QW intermixing techniques. Rapid thermal processing (RTP) can overcome some of these restrictions. Here we report the use of RTP with dielectric capping layers Of SiO2 and Si3N4 to initiate QW intermixing in strained InGaAs on GaAs substrates and unstrained InGaAs on InP substrates. The first structure contained a single 90 A QW, with GaAs barriers with the wells under tension. The second structure contained four 100 A InGaAs quantum wells, with 120 InGaAsP barriers embedded in 0.18 micrometers InGaAsP guiding region. The InP based system also has 1 micrometer InP above the QW structure and a 0.17 micrometers layer of InGaAs. 1000A dielectric caps were deposited by plasma deposition on both sets of samples. To prevent Group Ill desorption during annealing proximity capping with either GaAs or InP was used throughout.

Descriptors :   *SEMICONDUCTOR DEVICES, ANNEALING, BARRIERS, CAPPING, DEPOSITION, DESORPTION, DIELECTRICS, GALLIUM ARSENIDES, LAYERS, MICROMETERS, STABILITY, STRUCTURES, SUBSTRATES, TENSION, THERMAL STABILITY, INDIUM PHOSPHIDES, SILICON NITRIDES, SILICON DIOXIDE, QUANTUM ELECTRONICS, GREAT BRITAIN.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE