Accession Number : ADP008182

Title :   Design of Multi-Section Mode-Locked Semiconductor Lasers with Intra-Waveguide Saturable Absorbers,

Corporate Author : CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Derickson, D. J. ; Helkey, R. L. ; Mar, A. ; Wasserbauer, J. G. ; Bowers, J. E.

Report Date : APR 1992

Pagination or Media Count : 2

Abstract : Monolithic and external cavity mode-locked semiconductor lasers with multiple contacts have produced excellent results . The goal of this paper is to show how to optimize the design of these structures as a function of the free parameters in the design: (1) Active region composition and waveguiding, (2) segment lengths, and (3) electrical parasitics. The paper also explains how the effects of self-phase modulation in the saturable absorber and gain section interact with gain dispersion to limit the achievable pulse width. Shown are the types of structures that were fabricated and analyzed in this work. Both quantum well and bulk active region devices were tested at 0.85 micrometers and 1.55 micrometers. The functions of the various segments are: segment A provides the overall gain, segment B is reverse biased to form an intra-waveguide saturable absorber/photodetector, and segment C is used for active gain modulation or for repetition rate tuning.

Descriptors :   *PHASE MODULATION, *SEMICONDUCTOR LASERS, *MODE LOCKED LASERS, EXTERNAL, GAIN, MICROMETERS, PHOTODETECTORS, PULSES, REPETITION RATE, TUNING, LASER CAVITIES, OPTICAL WAVEGUIDES.

Subject Categories : Lasers and Masers
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE