Accession Number : ADP008183

Title :   Zero-Net Strain InGaAsP/InP Multiple Quantum Well Lasers,

Corporate Author : BRITISH TELECOM RESEARCH LABS IPSWICH (UNITED KINGDOM)

Personal Author(s) : Seltzer, C. P. ; Perrin, S. D. ; Gibbings, C. J. ; Tatham, M. C. ; Farr, J. R.

Report Date : APR 1992

Pagination or Media Count : 2

Abstract : In this paper, we compare results from zero-net-strain multiple quantum well lasers with similar devices having conventional strain (the barriers are lattice-matched to the substrate) and unstrained structures. Contrary to theoretical predictions, our initial results indicate that there is little difference between strained and unstrained lasers. The optimum design of multiple quantum well (MQW) lasers for high speed applications has recently been shown to be a structure with 16 wells. This performance may be enhanced by incorporating strain in the quantum wells. However, if large numbers of strained wells are grown, the structure may reach the critical thickness for epitaxial growth. This problem can be avoided by straining the barriers in the opposite sense to the wells to produce a zero-net-strain structure. All device layers were grown by atmospheric pressure MOVPE. A zero-net-strain structure with 16 In0.7Ga0.3As wells has been grown with a mean MQW mismatch of only +90ppm. The same structure was grown with the barriers lattice-matched to the InP substrate for comparison. The mean mismatch for this wafer was +1332ppm which is close to the critical limit. All of the wafers were fabricated into broad area and buried heterostructure lasers.

Descriptors :   *SEMICONDUCTOR LASERS, EPITAXIAL GROWTH, PRESSURE, SUBSTRATES, THICKNESS, VELOCITY, WAFERS, INDIUM PHOSPHIDES, GALLIUM ARSENIDES, GREAT BRITAIN.

Subject Categories : Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE