Accession Number : ADP008202
Title : Diode Pumped, Garnet Channel Waveguide Lasers,
Corporate Author : SOUTHAMPTON UNIV (UNITED KINGDOM)
Personal Author(s) : Large, A. C. ; Field, S. J. ; Hanna, D. C. ; Shepherd, D. P. ; Tropper, A. C.
Report Date : APR 1992
Pagination or Media Count : 2
Abstract : Ion implantation is a technique which can be used to form waveguides in a wide range of materials - including crystals of the garnet family for which no alternative techniques exist by bombarding the material surface with high energy ions and altering the refractive index. We report the use of this method to form channel waveguides in two Nd 3 + doped materials; Nd:YAG and Nd:GGG both of which have operated as ion implanted planar waveguide lasers . The additional confinement in the plane is achieved without any significant increase in propagation losses, which are comparable in the planar and channel guides. In the ND:YAG system sub-milliwatt thresholds were observed.
Descriptors : *LASER PUMPING, *OPTICAL WAVEGUIDES, CHANNELS, CRYSTALS, ENERGY, GARNET, HIGH ENERGY, IMPLANTATION, INDEXES, ION IMPLANTATION, IONS, LASERS, LOSSES, MATERIALS, PROPAGATION, REFRACTIVE INDEX, SURFACES, WAVEGUIDES, DIODES.
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE