Accession Number : ADP008207
Title : GaInAs/GaAs Waveguide Modulators with Multiple Short-Period Strained-Layer Superlattice Quantum Wells,
Corporate Author : HUGHES RESEARCH LABS MALIBU CA
Personal Author(s) : Yap, D. ; Hasenberg, T. C. ; Hsu, T. Y. ; Bourgholtzer, S. L. ; Kost, A. R.
Report Date : APR 1992
Pagination or Media Count : 2
Abstract : InGaAs/GaAs multiple quantum well (MQW) structures with wells that consist of InAs/GaAs short-period strained-layer superlattices (SPSLS) have shown sharp excitonic absorption peaks at room temperature, despite the high degree of strain. By using superlattices with multiple periods consisting of 2 monolayers of InAs and 5 monolayers of GaAs, dislocation free InGaAs wells with 0.30 average In mole fractions have been obtained. We report the first MQW waveguide modulators based on these InAs/GaAs SPSLS quantum wells. These modulators demonstrate significant electro-absorption and electro-refraction effects at wavelengths between 1.00 and 1.06 micrometers. An advantage of such modulators is that they can be monolithically integrated with low-threshold-current InGaAs lasers as well as low-loss GaAs wave-guides for various optical circuit applications. In addition, stronger electric-field dependences are expected for the wider wells permitted by the use of SPSLS.
Descriptors : *MODULATORS, *SUPERLATTICES, *OPTICAL WAVEGUIDES, ABSORPTION, ADDITION, CIRCUITS, DISLOCATIONS, ELECTRIC FIELDS, GALLIUM ARSENIDES, LASERS, LAYERS, LOW LOSS, MICROMETERS, OPTICAL CIRCUITS, REFRACTION, ROOM TEMPERATURE, STRUCTURES, TEMPERATURE, ALUMINUM GALLIUM ARSENIDES, FABRICATION.
Subject Categories : Optics
Distribution Statement : APPROVED FOR PUBLIC RELEASE